BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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350 pcs
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350 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The Vishay Siliconix SUD40N02-08 is a 20V N-Channel Power MOSFET featuring TrenchFET technology. It offers a low on-state resistance of 0.0085 Ohms at VGS = 4.5V and 40A continuous drain current. This MOSFET is rated for a maximum junction temperature of 175°C, making it suitable for demanding applications.
The device exhibits a drain-source breakdown voltage of 20V and a gate threshold voltage of 0.6V. Dynamic characteristics include input capacitance of 2660pF and total gate charge of 26-35nC. The SUD40N02-08 is supplied in a TO-252 package, designed for surface mounting.
Key electrical parameters include a maximum power dissipation of 71W at TC=25°C and thermal resistance ratings such as RthJC of 1.75°C/W typical. These specifications highlight its capability for efficient power handling in various electronic designs.
The drain-source breakdown voltage is 20V minimum at VGS = 0V, ID = 250µA.
The continuous drain current is 40A at TC = 25°C, package limited.
The typical drain-source on-state resistance is 0.0068Ω at VGS = 4.5V, ID = 20A.
The typical gate threshold voltage is 0.6V at VDS = VGS, ID = 250µA.
The operating junction and storage temperature range is -55°C to 175°C.
It is available in a TO-252 (DPAK) surface-mount package.
The typical total gate charge is 26nC at VDS = 10V, VGS = 4.5V, ID = 40A.