SUD35N10-26P-GE3 The Vishay Dale SUD35N10-26P-GE3 is an N-Channel MOSFET designed for 100V applications. It offers a continuous drain current of 35A and a low on-resistance.
Mfr Part #:

SUD35N10-26P-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SUD35N10-26P-GE3 is an N-Channel MOSFET designed for 100V applications. It offers a continuous drain current of 35A and a low on-resistance.
✓ Total Stock: 6,770 pcs
$ Price Range: $2.56

SUD35N10-26P-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,020 pcs
5020 pcs On Request 1 On Request On Request 19+ On Request 2026-06-03 08:15:27
Non-Authorised Inventory information
1,750 pcs
1750 pcs On Request 1 On Request On Request 19+ On Request On Request

SUD35N10-26P-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SUD35N10-26P-GE3 Description

Short technical summary and product information.

The SUD35N10-26P-GE3 is an N-Channel MOSFET from Vishay Dale, featuring TrenchFET power MOSFET technology. It is rated for a drain-source voltage of 100V and a continuous drain current of 35A at 25°C case temperature.

 

This MOSFET boasts a low on-resistance of 26mOhm at a gate-source voltage of 10V and a drain current of 12A. It operates within a temperature range of -55°C to 175°C. The device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.

 

Key electrical characteristics include a gate-source voltage tolerance of ±20V and a typical gate charge of 47nC at 10V. The input capacitance is rated at 2000pF at 12V drain-source voltage. The maximum power dissipation is 83W at 25°C case temperature and 8.3W at 25°C ambient temperature.

 

This component is designed for applications requiring efficient power switching. Its surface-mount package and robust specifications make it suitable for various electronic designs.

SUD35N10-26P-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix N-Channel 100V MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SUD35N10-26P-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SUD35N10-26P-GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SUD35N10-26P-GE3 Features

  • N-Channel 100V MOSFET.
  • 35A continuous drain current.
  • Low 26mOhm Rds On.
  • TO-252 surface mount package.
  • Wide operating temperature range.

SUD35N10-26P-GE3 Applications

  • Used in switching power supply circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for load switching applications.
  • Applies to motor drive circuits.
  • Used in battery management systems.

SUD35N10-26P-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the SUD35N10-26P-GE3?

The maximum drain-to-source voltage is 100V.

What package does the SUD35N10-26P-GE3 come in?

It comes in a TO-252-3 (DPak) surface-mount package with supplier device package TO-252AA.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

What is the continuous drain current rating?

The maximum continuous drain current is 35A at case temperature 25°C.

What is the typical on-resistance?

The maximum on-resistance is 26mΩ at Vgs=10V and Id=12A.

What is the typical gate charge?

The typical gate charge is 47nC at Vgs=10V.

What is the input capacitance?

The maximum input capacitance is 2000pF at Vds=12V.

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