| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
85,000 pcs
|
85000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
4,211 pcs
|
4211 pcs | On Request | 1 | On Request | On Request | 2010+ | On Request | On Request | |
|
918 pcs
|
918 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUD35N10-26P-E3 is an N-Channel power MOSFET designed for primary side switching applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 35A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds On) of 26mOhm at a gate-source voltage (Vgs) of 10V, and 37.5mOhm at 7V Vgs. The gate charge (Qg) is typically 31nC at 10V Vgs. It operates within a junction temperature range of -55°C to 175°C.
The device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. The maximum power dissipation is rated at 83W (Tc) and 8.3W (Ta). Its TrenchFET technology ensures efficient power handling.
Key electrical parameters include a gate-source breakdown voltage of ±20V and a gate-source threshold voltage of 4.4V at 250µA. The input capacitance (Ciss) is up to 2000pF at 12V Vds.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V minimum at ID=250μA.
TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
-55°C to 175°C junction and storage temperature.
31 nC typical at VGS=10V.
26 mOhm at ID=12A, VGS=10V.
35A at case temperature 25°C.
TrenchFET technology.