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6,060 pcs
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6060 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The SUD25N04-25-T4-E3 from VBsemi is a single N-channel MOSFET designed for various electronic applications. It comes in a TO-252 package, suitable for surface mount assembly.
This MOSFET utilizes Trench Technology, offering enhanced performance characteristics. Key electrical specifications include a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 55A. The gate threshold voltage (Vth) is typically 2.5V, and the on-resistance (RDS(on)) is rated at 14mΩ at VGS = 4.5V and 12mΩ at VGS = 10V. These parameters indicate efficient power handling capabilities.
The device operates with a gate-source voltage (VGS) of ±20V. Its N-channel polarity and surface mount package make it a versatile component for power management circuits, switching applications, and general-purpose amplification.
Environmental compliance includes RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status. However, these compliance details are based on internal data and should be verified.
The maximum drain-source voltage is 40V.
The typical on-resistance at VGS=10V is 12mΩ.
The continuous drain current is 55A.
It is available in a TO-252 surface-mount package.
The typical gate threshold voltage is 2.5V.
The maximum gate-source voltage is ±20V.
It uses Trench technology.