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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Continuous Drain Current (Maximum @ TA=70 °C) | |
| Continuous Drain Current (Maximum @ Tc=25 °C) | |
| Continuous Drain Current (Maximum @ Tc=70 °C) | |
| Continuous Drain Current (Minimum @ VDS 5 V, VGS = 10 V) | |
| Continuous Source Drain Diode Current (Maximum @ TA = 25 °C) | |
| Continuous Source Drain Diode Current (Maximum @ TC = 25 °C) | |
| Current | |
| Drain Leakage Current (Maximum @ VDS = 60 V, VGS = 0 V, TJ = 70 °C) | |
| Drain Leakage Current (Maximum @ Vds=60 V, Vgs=0 V) | |
| Drain Source On Resistance (Typical/Maximum @ Vgs=10 V, Id=15 A) | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| Drain-Source On-Resistance (Typical/Maximum @ VGS=4.5 V, ID=10 A) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Transconductance | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Charge (Typical @ VDS = 30 V, VGS = 4.5 V, ID = 23 A) | |
| Gate Charge (Typical/Maximum @ VDS = 30 V, VGS = 10 V, ID = 23 A) | |
| Gate Threshold Voltage (Minimum/Typical/Maximum @ Vds=Vgs, Id=250 µA) | |
| Gate-Source Leakage | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction To Ambient Thermal Resistance (Typical/Maximum @ t≤10 s) | |
| Junction To Case Thermal Resistance (Typical/Maximum) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ TA=70 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum @ Tc=70 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance | |
| Single Pulse Avalanche Current | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SUD23N06-31-GE3 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for efficient power switching and dc-dc conversion. The device features a drain-source breakdown voltage of 60 V and a maximum continuous drain current of 21.4 A at a case temperature of 25 °C. With a typical on-state resistance of 25 mΩ at VGS = 10 V and 37 mΩ at VGS = 4.5 V, the MOSFET minimizes conduction losses.
The gate is designed to be compatible with both 10 V and logic-level drive, with a maximum gate threshold voltage of 3 V. Total gate charge is typically 11 nC at VGS = 10 V, supporting fast switching transitions. Power dissipation is rated up to 31.25 W at 25 °C case temperature, and the junction temperature range extends from -55 °C to 150 °C.
The SUD23N06-31-GE3 is offered in a TO-252 (DPak) surface-mount package, which is well-suited for compact printed circuit board layouts. The part is halogen-free and lead-free. This MOSFET is suitable for a range of applications including load switching, power supply output stages, and battery management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is a minimum of 60 V at VGS = 0 V and ID = 250 µA.
The SUD23N06-31-GE3 is available in the TO-252-3 (DPak) surface-mount package.
The junction temperature range is -55 °C to +150 °C.
Typical on-resistance is 25 mΩ at VGS = 10 V and ID = 15 A, and 37 mΩ at VGS = 4.5 V and ID = 10 A.
The maximum continuous drain current is 21.4 A at TC = 25 °C and 9.1 A at TA = 25 °C.
The gate threshold voltage is typically 2 V with a range of 1 V to 3 V at ID = 250 µA.
Total gate charge is typically 6 nC at VGS = 4.5 V and 11 nC at VGS = 10 V, with a maximum of 17 nC at VGS = 10 V.