| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,005 pcs
|
26005 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SUD19P06-60-E3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 60V and can handle a continuous drain current (Tc) of 18.3A. The on-resistance (Rds On) is a maximum of 60mOhm when tested at 10A and 10V gate-source voltage.
The MOSFET operates within a temperature range of -55°C to 150°C (TJ). It has a gate charge (Qg) of 40 nC at 10V and an input capacitance (Ciss) of 1710 pF at 25V. The maximum gate-source voltage is ±20V, and the gate threshold voltage (Vgs(th)) is 3V at 250µA.
Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, this device is suitable for various electronic designs requiring efficient power switching. The power dissipation is rated at 2.3W (Ta) and 38.5W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
Surface mount TO-252-3 (DPak, SC-63) with supplier package TO-252AA.
-55°C to 150°C (junction temperature).
Maximum 3V at 250µA drain current.
38.5W at case temperature (Tc) and 2.3W at ambient (Ta).
Maximum 1710pF at 25V drain-source voltage.