| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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44,400 pcs
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44400 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Vishay SUD19P06-60 is a P-Channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 30A. It offers a low drain-source on-resistance of 60mOhms and a gate-source threshold voltage of 3V. This MOSFET operates with a gate-source voltage range of -20V to +20V and has a gate charge of 40nC.
Designed for surface mounting, the SUD19P06-60 comes in a TO-252-3 package. Its power dissipation is rated at 38.5W, with a minimum operating temperature of -55C and a maximum operating temperature of +150C. The technology used is Silicon (Si) and it features an enhancement channel mode. This component is suitable for applications requiring efficient power switching and control.
This MOSFET is manufactured by Vishay and falls under the category of Transistors - FETs, MOSFETs - Single. It is supplied in Trenchfet packaging, available on cut tape or reel, suitable for automated assembly processes.
The continuous drain current is 30 A.
The drain-source breakdown voltage is 60 V.
The drain-source on-resistance is 60 mOhms.
The gate-source threshold voltage is 3 V.
The operating temperature range is -55 C to +150 C.
It is in a TO-252-3 package.