SUD09P10-195-GE3 P-channel MOSFET by Vishay rated for -100V and 8.8A continuous drain current. Features a low on-resistance of 0.195Ω at 10V gate drive.
Mfr Part #:

SUD09P10-195-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
P-channel MOSFET by Vishay rated for -100V and 8.8A continuous drain current. Features a low on-resistance of 0.195Ω at 10V gate drive.
✓ Total Stock: 36,229 pcs
$ Price Range: $2.56

SUD09P10-195-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SUD09P10-195-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SUD09P10-195-GE3 Description

Short technical summary and product information.

The SUD09P10-195-GE3 is a P-channel enhancement-mode MOSFET manufactured by Vishay. It is designed for high-efficiency power management applications requiring a negative voltage supply rail. The device is rated with a minimum drain-source breakdown voltage of -100V and a maximum continuous drain current of 8.8A at 25°C case temperature.

 

The MOSFET offers a maximum on-resistance of 0.195Ω when driven with a gate-source voltage of -10V. The gate threshold voltage is specified to be a maximum of 2.5V, allowing for straightforward logic-level drive in many circuits. The maximum gate-source voltage rating is ±20V, providing robust gate drive handling.

 

The part is housed in a TO252 (DPAK) surface-mount package, suitable for automated assembly and compact PCB layouts. This device is commonly used in high-side load switching, buck-boost converters, and battery protection circuits where a P-channel device simplifies control circuitry.

SUD09P10-195-GE3 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: P-Channel MOSFET, -100V, 8.8A, TO252 (DPAK)
Subcategory: P-Channel MOSFET

SUD09P10-195-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SUD09P10-195-GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SUD09P10-195-GE3 Features

  • P-channel MOSFET for high-side switching.
  • Drain-source voltage rating of -100V.
  • Continuous drain current up to 8.8A.
  • Low on-resistance of 0.195 ohms.
  • Surface mount TO252 (DPAK) package.

SUD09P10-195-GE3 Applications

  • For high-side load switch circuits.
  • Used in DC-DC converter designs.
  • Suitable for battery protection modules.
  • Ideal for power rail switching.

SUD09P10-195-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The minimum drain-source breakdown voltage is -100V at -250µA drain current.

What package does this MOSFET use?

The device comes in a TO252 (DPAK) surface-mount package.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.5V at -250µA drain current.

What is the continuous drain current rating?

The maximum continuous drain current is 8.8A at 25°C case temperature.

What is the on-resistance?

The maximum on-resistance is 0.195Ω at VGS=-10V and ID=-3.6A.

What is the maximum gate-source voltage?

The maximum gate-source voltage is ±20V.

SUD09P10-195-GE3 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
SUD09P10-195-BE3
SUD09P10-195-BE3
Vishay
MOSFET P-CH 100V 8.8A DPAK
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