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43,214 pcs
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43214 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Vishay SUD09P10-195 is a P-Channel MOSFET belonging to the TrenchFET series. It offers a drain-source breakdown voltage of 100V and a continuous drain current of 8.8A. The on-resistance is rated at 195mOhms, with a gate-source threshold voltage of 1V.
This MOSFET operates with a gate-source voltage of -10V and has a gate charge of 23.2 nC. It features an enhancement channel mode and a power dissipation of 32.1W. The operating temperature range is from -55°C to +150°C.
Packaged in a TO-252-3 surface-mount (SMD/SMT) case and supplied on a reel, the SUD09P10-195 is suitable for various power management and switching applications. Its typical rise time is 12 ns and fall time is 9 ns.
The drain-source breakdown voltage is 100V.
The continuous drain current is 8.8A.
The drain-source on-resistance is 195mOhms.
The gate-source threshold voltage is 1V.
The operating temperature range is -55°C to +150°C.
The power dissipation is 32.1W.
This MOSFET is in a TO-252-3 package.