SUD08P06-155L-GE3 The Vishay SUD08P06-155L-GE3 is a P-Channel MOSFET with a 60V drain-source voltage rating. It offers a low on-state resistance of 155mOhm at 10V Vgs.
Mfr Part #:

SUD08P06-155L-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay SUD08P06-155L-GE3 is a P-Channel MOSFET with a 60V drain-source voltage rating. It offers a low on-state resistance of 155mOhm at 10V Vgs.
✓ Total Stock: 23,020 pcs
$ Price Range: $2.56

SUD08P06-155L-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
19,020 pcs
19020 pcs On Request 1 On Request On Request 15+ On Request 2026-06-03 08:15:27
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request

SUD08P06-155L-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SUD08P06-155L-GE3 Description

Short technical summary and product information.

The Vishay SUD08P06-155L-GE3 is a P-Channel MOSFET designed for power applications. It features a breakdown voltage of 60V and a maximum on-state resistance of 155mOhm at a gate-source voltage of -10V and a drain current of 5A.

 

This MOSFET has a continuous drain current rating of 8.2A at 25°C case temperature and can handle pulsed drain currents up to 18A. The operating junction temperature ranges from -55°C to +150°C. It is packaged in a TO-252 (DPak) surface-mount package.

 

Key electrical characteristics include a gate threshold voltage of 3V maximum at 250µA and input capacitance of 450pF at 25V. The device is suitable for various power switching and control applications where a P-Channel MOSFET is required.

SUD08P06-155L-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SUD08P06-155L-GE3 P-Channel 60V MOSFET
Subcategory: P-Channel

SUD08P06-155L-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SUD08P06-155L-GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SUD08P06-155L-GE3 Features

  • P-Channel 60V MOSFET
  • 155mOhm max RdsOn at 10V Vgs
  • 8.4A continuous drain current
  • TO-252 surface mount package
  • Operating temperature -55°C to 150°C

SUD08P06-155L-GE3 Applications

  • Power switching applications
  • Load switching circuits
  • Battery management systems
  • General purpose power control

SUD08P06-155L-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of this MOSFET?

The minimum drain-source breakdown voltage is -60V at VGS = 0V and ID = -250μA.

What is the continuous drain current rating?

The maximum continuous drain current is -8.2A at TC = 25°C and -5.2A at TC = 100°C.

What is the maximum on-state resistance?

The maximum on-state resistance is 155mOhm at VGS = -10V and ID = 5A, and 280mOhm at VGS = -4.5V and ID = 5A.

What is the operating junction temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package does this MOSFET come in?

The package is TO-252-3 (DPak with 2 leads and tab) surface mount.

What is the typical gate threshold voltage?

The typical gate threshold voltage is -1V, with a maximum of -3V at VDS = VGS and ID = -250μA.

What is the typical input capacitance?

The typical input capacitance (Ciss) is 450pF at VDS = 25V, VGS = 0V, f = 1MHz.

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