| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,800 pcs
|
32800 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SUD06N10-225L-GE3 is an N-channel MOSFET from Vishay Dale designed for medium-voltage switching applications. It features a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 6.5A, making it suitable for power management and load switching circuits.
This MOSFET is housed in a TO252AA (DPAK) surface-mount package, which offers a compact footprint for automated assembly. The device is optimized for low on-resistance and efficient switching performance.
Typical applications include DC-DC converters, power supply circuits, and motor control in industrial and consumer electronics. The part is RoHS-compliant and lead-free, meeting current environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 100V.
The continuous drain current (Id) is 6.5A.
It is available in a TO252AA (DPAK) surface-mount package.