| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,600 pcs
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2600 pcs | On Request | 1 | On Request | On Request | 08+PBF | On Request | On Request |
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The Vishay Siliconix SUB85N06-05-E3 is a high-performance N-Channel MOSFET. It is designed to handle demanding power applications with a maximum drain-source voltage of 60V and a continuous drain current of 85A at 25°C.
This MOSFET features a low on-resistance of 5 mOhm, ensuring efficient power transfer and minimizing heat generation. The gate threshold voltage is a maximum of 2V, and it has a gate charge of 100nC. The input capacitance is rated at a maximum of 2000pF.
With a maximum power dissipation of 250W, the SUB85N06-05-E3 is suitable for various power management tasks. It is packaged in a TO-263 surface mount configuration, facilitating integration into compact electronic designs.
This component is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life under recommended storage conditions. It is also REACH unaffected.
The maximum drain-source voltage is 60V.
The continuous drain current is 85A at 25°C.
The maximum on-resistance is 5 mOhm.
The gate threshold voltage is a maximum of 2V.
The maximum power dissipation is 250W.
It is in a TO-263 package for surface mounting.