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326 pcs
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326 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The Vishay SUB85N03-07P is an N-Channel MOSFET designed for various electronic applications. It features a breakdown voltage of 30V and a low drain-source on-resistance of 7mΩ at a gate-source voltage of 10V. The device can handle a maximum continuous drain current of 98A and has a maximum power dissipation of 107W.
This MOSFET is housed in a TO-263-3 package, making it suitable for surface-mount applications. It operates within a wide temperature range from -55°C to 175°C. The rise time is 70ns and the fall time is 105ns, indicating efficient switching characteristics.
Key electrical parameters include a typical power dissipation of 3.75W. The SUB85N03-07P is manufactured by Vishay, a well-known semiconductor provider. Its specifications make it a suitable component for power management and switching circuits.
The breakdown voltage is 30V.
The typical drain-source on-resistance is 7mΩ at a gate-source voltage of 10V.
The maximum power dissipation is 107W.
The operating temperature range is from -55°C to 175°C.
It is supplied in a TO-263-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.