| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32,500 pcs
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32500 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| SVHC Present |
The Vishay Dale SUB75P03-07 is a P-Channel MOSFET with a 30V drain-source breakdown voltage. It is available in TO-220AB and TO-263 packages, suitable for various mounting requirements.
Key electrical characteristics include a low on-state resistance of 0.007 Ω at VGS = -10V and ID = -30A, and a typical forward transconductance of 20S. The device can handle a continuous drain current of up to 75A at 25°C case temperature and a pulsed drain current of 240A.
With a maximum operating junction temperature of 175°C, this MOSFET is designed for demanding thermal environments. The TO-263 package offers a junction-to-ambient thermal resistance of 40 °C/W when PCB mounted, while the TO-220AB package has a junction-to-ambient resistance of 62.5 °C/W in free air. The junction-to-case thermal resistance is 0.8 °C/W.
This component is compliant with RoHS Directive 2002/95/EC and is available in lead (Pb)-free versions. It is suitable for applications requiring efficient power switching and control.
The drain-source breakdown voltage is -30V (minimum).
The continuous drain current is 75A at TC=25°C (package limited).
The typical on-resistance is 5.5mΩ at VGS=-10V, ID=-30A.
The SUB75P03-07 is available in TO-263 and TO-220AB packages.
The operating junction and storage temperature range is -55°C to 175°C.
The gate-source voltage rating is ±20V.
The maximum pulsed drain current is -240A.