| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,540 pcs
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6540 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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The SUB75N08-09L from Vishay Siliconix is an N-Channel MOSFET suitable for various power electronic applications. This component features a breakdown voltage of 75V and a low drain-source on-state resistance of 9mΩ, indicating efficient power handling.
With a continuous drain current capability of 75A and a maximum power dissipation of 250W, the SUB75N08-09L is built for demanding environments. It operates within a temperature range of -55°C to 175°C, ensuring reliability across different conditions. The MOSFET is supplied in a TO-263-3 package, commonly used for surface-mount applications requiring good thermal performance.
Key electrical characteristics include a rise time of 10ns and a fall time of 22ns, contributing to fast switching speeds. The typical power dissipation is rated at 3.7W. This MOSFET is designed for applications where high current and voltage handling are critical.
75V.
75A.
9mΩ.
250W.
-55°C to 175°C.
TO-263-3.
Rise time 10ns, fall time 22ns.