| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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110,000 pcs
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110000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The STZD3155CT1G is a dual N and P-channel enhancement mode MOSFET array manufactured by On Semiconductor. This device integrates both an N-channel and a P-channel MOSFET in a single SOT563 surface mount package, providing a compact solution for complementary switching applications.
Key electrical specifications include a drain-source voltage (Vdss) rating of 20V and a continuous drain current (Id) of 540mA. The SOT563 package is a small, leadless package suitable for space-constrained designs.
This MOSFET array is designed for use in load switching, power management, and DC-DC converter circuits where both N-channel and P-channel devices are required. The complementary pair simplifies PCB layout and reduces component count.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 20V.
The continuous drain current (Id) is 540mA.
The STZD3155CT1G is available in a SOT563 package.
It is a dual MOSFET array containing both an N-channel and a P-channel MOSFET.