| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,544 pcs
|
8544 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The STMicroelectronics STY80NM60N is an N-channel Power MOSFET developed using MDmesh™ II technology. This device offers a 600V drain-source voltage and a maximum continuous drain current of 74A at 25°C. Its low on-resistance is rated at a maximum of 35mOhm at 37A and 10V gate drive.
Key electrical characteristics include a gate charge of 360 nC at 10V and an input capacitance of 10100 pF at 50V. The MOSFET has a maximum power dissipation of 447W at 25°C.
This component is housed in a TO-247-3 package and is designed for through-hole mounting. It is suitable for demanding high efficiency switching applications.
The operating temperature range for the STY80NM60N is up to 150°C (TJ). It also features a peak diode recovery voltage slope of 15 V/ns and is 100% avalanche tested.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
TO-247-3 (MAX247).
150°C.
74 A at case temperature 25°C, 46 A at 100°C.
35 mOhm maximum at 37A drain current and 10V gate-source voltage.
360 nC at 10V gate-source voltage.
2 J.