| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
204 pcs
|
204 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STY60NM50 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 500V and a continuous drain current of 60A at a case temperature of Tc. The on-resistance (Rds On) is a maximum of 50mOhm at 30A and 10V gate-source voltage.
This MOSFET operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 560W at Tc. Key electrical characteristics include an input capacitance (Ciss) of 7500pF at 25V and a gate charge (Qg) of 266nC at 10V. The gate threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate-source voltage is ±30V.
The STY60NM50 utilizes MOSFET (Metal Oxide) technology and is suitable for through-hole mounting. It comes in a TO-247-3 package, also referred to as MAX247™ by the supplier. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
60A at case temperature.
50 mOhm at 30A and 10V gate drive.
560W at case temperature.
TO-247-3 (MAX247™).
Maximum junction temperature 150°C.
5V at 250µA.