| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,427 pcs
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1427 pcs | On Request | 1 | On Request | On Request | 9902 | On Request | On Request |
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The STMicroelectronics STY60NA20 is a high-performance N-Channel Power MOSFET. It is designed to handle significant power with a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 60A at 25°C with a Vgs of 10V.
This MOSFET features a low typical on-resistance (Rds(on)) of 0.032 Ohms when Vgs is 10V and Id is 30A, contributing to efficient power transfer and reduced heat generation. The component is housed in a MAX247 package, suitable for power applications requiring robust thermal performance.
As an N-Channel Silicon Metal-oxide Semiconductor FET, the STY60NA20 is suitable for various power switching and amplification tasks in electronic circuits. Its specifications make it a reliable choice for designs demanding high current handling and voltage blocking capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the STY60NA20 is 200V.
The continuous drain current (Id) for the STY60NA20 is 60A.
The typical on-resistance (Rds(on)) of the STY60NA20 is 0.032 Ohms.
The STY60NA20 MOSFET is supplied in a MAX247 package.
The STY60NA20 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the STY60NA20 is 1 Unlimited.
The REACH status for the STY60NA20 is REACH Unaffected.