STY34NB50 The STMicroelectronics STY34NB50 is an N-Channel Power MOSFET designed for high current, high speed switching applications. It features 500V drain-source voltage and 34A continuous drain current.
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STY34NB50

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STY34NB50 is an N-Channel Power MOSFET designed for high current, high speed switching applications. It features 500V drain-source voltage and 34A continuous drain current.
✓ Total Stock: 46,927 pcs
$ Price Range: $2.56

STY34NB50 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
43,327 pcs
43327 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request

STY34NB50 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STY34NB50 Description

Short technical summary and product information.

The STMicroelectronics STY34NB50 is an N-Channel Power MOSFET utilizing the latest high voltage MESH OVERLAY process. This advanced design provides outstanding performance with an extremely low RDS(on) of typically 0.11 Ω and a maximum of 0.13 Ω at 17A and 10V gate drive.

 

With a drain-source voltage rating of 500V and a continuous drain current of 34A at 25°C, this MOSFET is suitable for high current and high speed switching applications. It boasts exceptional avalanche and dv/dt capabilities, along with minimized gate charge and reduced voltage spread.

 

The STY34NB50 is housed in a TO-247-3 package, designed for through-hole mounting. Its operating junction temperature is rated up to 150°C, with a total power dissipation of 450W at 25°C. This makes it ideal for demanding applications such as switch mode power supplies (SMPS) and DC-AC converters for welding equipment and uninterruptible power supplies.

 

Key electrical characteristics include a gate threshold voltage of 3.45V (typical) and a maximum gate-source voltage rating of ±30V. The input capacitance is 9100 pF at 25V, and the gate charge is 223 nC at 10V.

STY34NB50 Quick Information

Product Type: MOSFET
Canonical Name: STY34NB50 N-Channel 500V 34A Power MOSFET
Subcategory: N-Channel

STY34NB50 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STY34NB50 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STY34NB50 Features

  • 500V drain-source voltage rating.
  • 34A continuous drain current.
  • Low 130mOhm max Rds On.
  • TO-247-3 through-hole package.
  • High dv/dt capability.

STY34NB50 Applications

  • Ideal for high speed switching.
  • Used in switch mode power supplies.
  • Suitable for DC-AC converters.
  • Applications in welding equipment.
  • Powering uninterruptible supplies.

STY34NB50 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STY34NB50?

500V.

What is the continuous drain current of the STY34NB50?

34A at 25°C case temperature.

What is the on-resistance of the STY34NB50?

130mOhm maximum at 10V gate drive and 17A drain current.

What is the package type of the STY34NB50?

TO-247-3.

What is the maximum operating junction temperature?

150°C.

What is the gate threshold voltage of the STY34NB50?

3.45V nominal at 250µA drain current.

What is the single pulse avalanche energy rating?

1000mJ.

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