STY30NK90Z STY30NK90Z is an N-Channel power MOSFET from STMicroelectronics, rated for 900V drain-source voltage and 26A continuous drain current. Housed in a TO-247-3 through-hole package, it offers low on-resistance of 260mOhm.
Mfr Part #:

STY30NK90Z

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
STY30NK90Z is an N-Channel power MOSFET from STMicroelectronics, rated for 900V drain-source voltage and 26A continuous drain current. Housed in a TO-247-3 through-hole package, it offers low on-resistance of 260mOhm.
✓ Total Stock: 72 pcs
$ Price Range: $2.56

STY30NK90Z Available from 1 distributor

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72 pcs
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STY30NK90Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

STY30NK90Z Description

Short technical summary and product information.

The STY30NK90Z is an N-Channel power MOSFET manufactured by STMicroelectronics. It is designed for high-voltage switching applications with a drain-source voltage (Vdss) of 900V and a continuous drain current of 26A at 25°C case temperature. The device features a low on-resistance (Rds(on)) of 260mOhm maximum at 14A drain current and 10V gate drive. Gate threshold voltage is 4.5V maximum at 150µA drain current.

 

Additional electrical characteristics include a high input capacitance of 12000pF and a total gate charge of 490nC at 10V. Maximum power dissipation is 450W at 25°C case temperature. Junction-to-case thermal resistance is 0.277°C/W and junction-to-ambient is 30°C/W. The device can withstand repetitive avalanche currents up to 26A and single-pulse avalanche energy of 500mJ. Peak diode recovery voltage slope is 4.5V/ns.

 

The STY30NK90Z is supplied in the TO-247-3 package (MAX247™), a through-hole mounting type suitable for heatsinking. It is delivered in tube packaging. Operating junction temperature range is -65°C to 150°C.

STY30NK90Z Quick Information

Product Type: Power MOSFET
Series: STY30NK90Z
Canonical Name: STY30NK90Z N-Channel MOSFET, 900V, 26A, TO-247-3
Subcategory: N-Channel MOSFET

STY30NK90Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STY30NK90Z Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STY30NK90Z Features

  • 900V drain-source voltage rating.
  • 26A continuous drain current capability.
  • Low on-resistance of 260mOhm.
  • TO-247-3 through-hole package.
  • Avalanche rated for 500mJ energy.

STY30NK90Z Applications

  • High-voltage switching power supplies.
  • Motor drive inverter circuits.
  • Power management systems.

STY30NK90Z FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STY30NK90Z?

900V.

What is the continuous drain current rating?

26A at case temperature 25°C.

What package is the STY30NK90Z available in?

TO-247-3 (MAX247).

What is the operating junction temperature range?

-65°C to 150°C.

What is the on-resistance (Rds(on))?

260mOhm maximum at 14A drain current and 10V gate drive.

What is the total gate charge?

490nC at 10V gate-source voltage.

What is the single-pulse avalanche energy capability?

500mJ.

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