RN1416,LFT
Toshiba
The Toshiba RN1416,LFT is an RF Diode. It features RoHS3 Compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,739 pcs
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8739 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Halogen Free | |
| SVHC Present | |
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The STY25NA60 is a high-performance N-Channel Power MOSFET manufactured by STMicroelectronics. This component is designed for demanding applications requiring robust power handling capabilities. It boasts a high drain-source voltage rating of 600V and a low on-resistance of 0.225 Ohms, ensuring efficient power transfer and minimal energy loss.
The MOSFET is housed in a MAX247 package, suitable for power applications where thermal management is critical. Its design emphasizes extremely low gate charge, which contributes to faster switching speeds and improved overall system efficiency. This makes the STY25NA60 a suitable choice for various power switching and control circuits.
Key electrical characteristics include a continuous drain current of 25A. The component's construction and specifications are geared towards reliability and performance in power electronics designs. While specific operating temperature and detailed switching characteristics are not provided here, the core parameters indicate its suitability for applications demanding high voltage and current handling.
The drain-source voltage rating for the STY25NA60 is 600V.
The on-resistance (Rds(on)) of the STY25NA60 is 0.225 Ohms.
The continuous drain current for the STY25NA60 is 25A.
The STY25NA60 is supplied in the MAX247 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.