STY145N65M5 The STMicroelectronics STY145N65M5 is an N-Channel MOSFET designed for high-power applications. It offers a 650V drain-source voltage and a continuous drain current of 138A.
Mfr Part #:

STY145N65M5

Available from 5 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STY145N65M5 is an N-Channel MOSFET designed for high-power applications. It offers a 650V drain-source voltage and a continuous drain current of 138A.
✓ Total Stock: 13,215 pcs
$ Price Range: $2.56

STY145N65M5 Available from 5 distributors

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✓ Non-Authorised

STY145N65M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STY145N65M5 Description

Short technical summary and product information.

The STMicroelectronics STY145N65M5 is a robust N-Channel MOSFET designed for demanding power applications. It features a high drain-source voltage rating of 650V and a substantial continuous drain current capability of 138A at a case temperature.

 

This MOSFET exhibits a low on-resistance of 15mOhm at 69A and 10V, contributing to efficient power transfer. Key electrical characteristics include a gate charge of 414nC and an input capacitance of 18500pF, both measured under specified conditions. The gate threshold voltage is 5V at 250µA, and the maximum gate-source voltage is ±25V.

 

Operating at temperatures up to 150°C (TJ), the STY145N65M5 is suitable for high-temperature environments. It is housed in a TO-247-3 package and designed for through-hole mounting, offering a power dissipation of up to 625W (Tc).

 

This component utilizes MOSFET (Metal Oxide) technology, providing reliable performance in various power switching applications.

STY145N65M5 Quick Information

Product Type: MOSFET
Canonical Name: STY145N65M5 N-Channel MOSFET
Subcategory: N-Channel

STY145N65M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STY145N65M5 Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STY145N65M5 Features

  • 650V drain-source voltage rating.
  • 138A continuous drain current.
  • Low 15mOhm on-resistance.
  • TO-247-3 through-hole package.
  • High operating temperature up to 150°C.

STY145N65M5 Applications

  • Suitable for high-power switching.
  • Designed for efficient power conversion.
  • Used in demanding industrial applications.
  • Robust thermal performance.

STY145N65M5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STY145N65M5?

The maximum drain-to-source voltage is 650V.

What package is the STY145N65M5 available in?

It is available in a TO-247-3 through-hole package, also known as MAX247™.

What is the maximum junction temperature?

The maximum junction temperature is 150°C.

What is the continuous drain current rating?

The continuous drain current rating is 138A at Tc.

What is the on-resistance at 10V gate drive?

The maximum on-resistance is 15mΩ at 69A drain current and 10V gate voltage.

What is the gate charge?

The maximum gate charge is 414nC at 10V.

Is the FET N-channel?

Yes, it is an N-channel MOSFET.

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