STY139N65M5 The STMicroelectronics STY139N65M5 is an N-Channel MOSFET designed for high-power applications. It offers a 650V drain-source voltage and a continuous current rating of 130A.
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STY139N65M5

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STY139N65M5 is an N-Channel MOSFET designed for high-power applications. It offers a 650V drain-source voltage and a continuous current rating of 130A.
✓ Total Stock: 4,349 pcs
$ Price Range: $2.56

STY139N65M5 Available from 1 distributor

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STY139N65M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STY139N65M5 Description

Short technical summary and product information.

The STMicroelectronics STY139N65M5 is a robust N-Channel MOSFET belonging to the discrete semiconductor product category. It is engineered for demanding applications requiring high voltage and current handling capabilities.

 

Key electrical specifications include a maximum drain-source voltage (Vdss) of 650V and a continuous current rating of 130A at the case temperature. The MOSFET exhibits a low on-resistance of 17mOhm at a gate-source voltage of 10V and a drain current of 65A. Its gate charge (Qg) is rated at 363nC, with a gate-to-source voltage range of ±25V and a threshold voltage of 5V.

 

This device operates at a maximum junction temperature of 150°C and can dissipate up to 625W of power. It is housed in a TO-247-3 package, suitable for through-hole mounting.

 

The STY139N65M5 is designed for applications where high efficiency and reliability are critical. Its specifications make it suitable for power supply units, motor control, and other power management systems.

STY139N65M5 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STY139N65M5 N-Channel MOSFET
Subcategory: N-Channel

STY139N65M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STY139N65M5 Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STY139N65M5 Features

  • 650V drain-source voltage rating.
  • 130A continuous current capability.
  • Low 17mOhm on-resistance.
  • TO-247-3 through-hole package.
  • RoHS3 compliant status.

STY139N65M5 Applications

  • Suitable for high-voltage power supplies.
  • Used in motor control circuits.
  • Ideal for power switching applications.
  • Applicable in energy conversion systems.

STY139N65M5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STY139N65M5?

650V.

What is the maximum continuous drain current?

130A at case temperature Tc.

What is the on-resistance of this MOSFET?

17mOhm maximum at 65A drain current and 10V gate drive.

What is the gate charge?

363 nC at 10V gate-source voltage.

What is the operating junction temperature?

150°C maximum.

What package is the STY139N65M5 available in?

TO-247-3 (MAX247™) through-hole package.

What is the gate threshold voltage?

5V maximum at 250µA drain current.

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