| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,739 pcs
|
24739 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STY112N65M5 is an N-Channel MOSFET belonging to the MDmesh™ V series. It is designed for robust performance with a maximum drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 96A at 25°C.
This MOSFET offers a low on-resistance (Rds On) of 22mOhm at 47A and 10V drive voltage, contributing to efficient power handling with a maximum power dissipation of 625W (Tc). Key electrical parameters include a gate charge (Qg) of 350nC at 10V and an input capacitance (Ciss) of 16870pF at 100V. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA, with a maximum gate-source voltage (Vgs) of ±25V.
Packaged in a TO-247-3 through-hole configuration, the STY112N65M5 operates at a maximum junction temperature (TJ) of 150°C. Its technology is MOSFET (Metal Oxide), and it is supplied in the MAX247 package.
Environmental compliance includes RoHS3 compliance and REACH unaffected status. The Moisture Sensitivity Level (MSL) is rated as 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
96A at 25°C.
22mOhm maximum at 47A drain current and 10V gate-source voltage.
350nC at 10V gate voltage.
150°C junction temperature.
TO-247-3 (MAX247).
Through Hole.