| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,080 pcs
|
1080 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STY105NM50N is an N-Channel MOSFET belonging to the discrete semiconductor products category. It is designed for robust performance with a maximum drain-source voltage (Vdss) of 500V and a continuous current rating of 110A at a case temperature (Tc).
The MOSFET features a low on-resistance (Rds On) of 22mOhm at 52A and 10V gate-source voltage, contributing to efficient power handling. Its gate charge (Qg) is rated at a maximum of 326nC at 10V, and input capacitance (Ciss) is 9600pF at 100V.
Operating within a temperature range of -55°C to 150°C (TJ), this device is suitable for demanding thermal environments. It utilizes MOSFET (Metal Oxide) technology and has a gate-source voltage (Vgs) limit of ±25V, with a threshold voltage (Vgs(th)) of 4V at 250µA.
The STY105NM50N is packaged in a TO-247-3 through-hole configuration, with a maximum power dissipation of 625W (Tc). It is specified as RoHS3 Compliant, with an MSL of 1, and REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 500V.
The device is packaged in TO-247-3 (MAX247 supplier package) with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The maximum continuous drain current is 110A at case temperature (Tc).
The maximum power dissipation is 625W at case temperature (Tc).
The maximum on-resistance is 22mOhm at a drain current of 52A and gate-source voltage of 10V.
The maximum gate charge is 326nC at gate-source voltage of 10V.