| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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21,300 pcs
|
21300 pcs | On Request | 1 | On Request | On Request | 1649+1705+ | On Request | On Request |
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The STMicroelectronics STX13003 is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a TO-92AP package and designed for through-hole mounting.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 400V and a maximum DC collector current of 1A. The transistor offers a minimum DC current gain (hFE) of 8 at 500mA and 2V, with a maximum Vce saturation of 1.5V at 500mA and 1.5A.
With a power dissipation rating of 1500mW, the STX13003 operates within a temperature range of -65°C to +150°C. The component is specified with an emitter-base voltage (VEBO) of 9V.
This transistor is suitable for applications requiring high voltage switching and amplification. Its through-hole mounting and standard TO-92AP package facilitate integration into through-hole circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the STX13003 is 400V.
The maximum continuous collector current (Ic) for the STX13003 is 1A.
The power dissipation (Pd) for the STX13003 is 1500mW.
The STX13003 operates between -65°C and +150°C.
The minimum DC current gain (hFE) is 8 at 500mA collector current and 2V collector-emitter voltage.
The STX13003 is supplied in a TO-92AP package.
The STX13003 is designed for through-hole mounting.