| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,054 pcs
|
1054 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STWA88N65M5 is a robust N-Channel MOSFET with a 650V drain-to-source voltage rating and a continuous current capacity of 84A at a case temperature of Tc. It offers a low on-resistance (Rds On) of 29mOhm at 42A and 10V gate drive voltage, with a maximum gate charge of 204nC.
The MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 450W (Tc). It is suitable for through-hole mounting and comes in a TO-247-3 package.
Key electrical characteristics include an input capacitance (Ciss) of 8825pF at 100V and a gate threshold voltage (Vgs(th)) of 5V at 250µA. The maximum gate-to-source voltage is ±25V.
This component is designed for applications requiring high voltage and current handling capabilities, typical in power supply and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 650 V.
The continuous current rating is 84A at the case temperature (Tc).
The Rds On is a maximum of 29mOhm when the drain current (Id) is 42A and the gate-source voltage (Vgs) is 10V.
The operating junction temperature (TJ) is up to 150°C.
This MOSFET is designed for through-hole mounting.
It is supplied in the TO-247-3 package.