| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,048 pcs
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1048 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STWA70N65DM6 is an N-Channel Power MOSFET with a 650V drain-to-source breakdown voltage. It is designed for applications requiring high current handling capabilities, rated for 68A at a case temperature of 25°C.
Key electrical characteristics include a low on-resistance of 40mOhm maximum at 34A and 10V gate-source voltage, and a gate charge of 125nC maximum at 10V. The device operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a TO-247-3 configuration with through-hole mounting, this MOSFET is suitable for various power switching and conversion applications. The STWA70N65DM6 utilizes MOSFET technology for efficient power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-247-3.
-55°C to 150°C.
68A.
40mOhm at 34A, 10V.
125nC at 10V.
4900pF at 100V.