| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,892 pcs
|
7892 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The STW9NA80 is an N-Channel MOSFET manufactured by STMicroelectronics. It features a high breakdown voltage of 800V, making it suitable for high-voltage applications.
The MOSFET has a drain-source resistance of 1Ω and a maximum power dissipation of 190W. It operates at a maximum temperature of 150°C. The component is packaged in a TO-247 case.
This MOSFET is designed for power switching applications where high voltage and moderate power handling are required. Its specifications suggest use in power supplies, motor control, and other industrial applications requiring robust performance.
The breakdown voltage of the STW9NA80 MOSFET is 800V.
The drain-source resistance of the STW9NA80 is 1Ω.
The maximum power dissipation for the STW9NA80 is 190W.
The maximum operating temperature for the STW9NA80 is 150°C.
The STW9NA80 MOSFET is supplied in a TO-247 package.