STW9N150 The STMicroelectronics STW9N150 is an N-Channel MOSFET designed for high voltage applications. It features a 1500V drain-source voltage and 8A continuous drain current.
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STW9N150

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW9N150 is an N-Channel MOSFET designed for high voltage applications. It features a 1500V drain-source voltage and 8A continuous drain current.
✓ Total Stock: 27,439 pcs
$ Price Range: $2.56

STW9N150 Available from 3 distributors

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✓ Non-Authorised
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19,449 pcs
19449 pcs On Request 1 On Request On Request On Request On Request On Request
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6,990 pcs
6990 pcs On Request 1 On Request On Request On Request On Request On Request
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1,000 pcs
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STW9N150 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW9N150 Description

Short technical summary and product information.

The STMicroelectronics STW9N150 is an N-Channel MOSFET belonging to the PowerMESH™ series. It is designed for high-voltage applications, offering a maximum drain-to-source voltage (Vdss) of 1500V and a continuous drain current (Id) of 8A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 2.5 Ohms at 4A and 10V, a gate threshold voltage (Vgs(th)) of 5V at 250µA, and a maximum gate charge (Qg) of 89.3 nC at 10V. The device operates with a drive voltage of 10V and has a maximum gate-source voltage (Vgs) of ±30V. Its input capacitance (Ciss) is rated at a maximum of 3255 pF at 25V.

 

This MOSFET is housed in a TO-247-3 package and features a through-hole mounting type. It has a maximum power dissipation of 320W (Tc) and an operating temperature range of -55°C to 150°C (TJ). The technology used is MOSFET (Metal Oxide).

 

The STW9N150 is suitable for various power switching applications where high voltage blocking capability and efficient switching are required.

STW9N150 Quick Information

Product Type: MOSFET
Series: PowerMESH™
Canonical Name: STMicroelectronics STW9N150 N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STW9N150 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW9N150 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW9N150 Features

  • N-Channel MOSFET technology
  • 1500V drain-to-source voltage
  • 8A continuous drain current
  • 2.5 Ohm maximum on-resistance
  • TO-247-3 through-hole package

STW9N150 Applications

  • High-voltage power switching
  • Power supply applications
  • Motor control circuits
  • Industrial automation systems

STW9N150 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STW9N150?

The maximum drain-to-source voltage (Vdss) is 1500 V.

What is the continuous drain current at 25°C for the STW9N150?

The continuous drain current (Id) at 25°C (Tc) is 8A.

What is the maximum on-resistance of the STW9N150?

The maximum on-resistance (Rds On) is 2.5 Ohm at 4A and 10V.

What is the package type for the STW9N150?

The package type is TO-247-3.

What is the operating temperature range for the STW9N150?

The operating temperature range is -55°C to 150°C (TJ).

Is the STW9N150 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the STW9N150?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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