| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | 902 | On Request | On Request | |
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | 12+PBF | On Request | On Request | |
|
2,010 pcs
|
2010 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW8NK80Z is a single N-Channel MOSFET designed for power applications. It features a high drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 6.2A at Tc. The MOSFET has a maximum on-resistance (Rds On) of 1.5 Ohm at 3.1A and 10V gate-source voltage.
With a maximum gate-source voltage (Vgs) of ±30V and a gate threshold voltage (Vgs(th)) of 4.5V at 100µA, this device offers controlled switching characteristics. The input capacitance (Ciss) is 1320 pF at 25V, and the gate charge (Qg) is 46 nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 140W (Tc). It utilizes MOSFET (Metal Oxide) technology.
The STW8NK80Z is designed for through-hole mounting and comes in a TO-247-3 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
6.2A at case temperature.
1.5Ohm at 3.1A drain current and 10V gate drive.
4.5V at 100µA drain current.
-55°C to 150°C (junction).
TO-247-3.
46nC at 10V.