| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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582 pcs
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582 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The STW8NC80Z is an N-Channel Power MOSFET manufactured by STMicroelectronics, belonging to the PowerMESH III family. This component is designed for high-voltage applications, featuring a drain-source breakdown voltage (Vdss) of 800V. It offers a typical on-resistance (Rds(on)) of 1.3Ω at a gate-source voltage of 10V, with a maximum specified at 1.5Ω under the same conditions. The continuous drain current (Id) is rated at 6.7A.
Key design features include Zener protection integrated into the gate, providing enhanced robustness. The MOSFET also boasts extremely high dv/dt capability and is 100% avalanche tested, ensuring reliability under demanding conditions. It is housed in a TO-247 package, suitable for through-hole mounting.
With its high voltage rating, low on-resistance, and protective features, the STW8NC80Z is suitable for various power switching applications where high efficiency and reliability are critical.
800V.
TO-247.
6.7A.
Typical 1.3Ω, maximum 1.5Ω at Vgs=10V.
Yes, 100% avalanche tested.
Zener-protected gate.
Extremely high dv/dt capability.