STW8NB100 The STMicroelectronics STW8NB100 is an N-Channel Power MOSFET designed for high voltage applications. It offers a 1000V drain-source voltage and a continuous drain current of 7.3A.
Mfr Part #:

STW8NB100

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW8NB100 is an N-Channel Power MOSFET designed for high voltage applications. It offers a 1000V drain-source voltage and a continuous drain current of 7.3A.
✓ Total Stock: 12,415 pcs
$ Price Range: $2.56

STW8NB100 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,805 pcs
8805 pcs On Request 1 On Request On Request 15+ On Request On Request
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
10 pcs
10 pcs On Request 1 On Request On Request On Request On Request On Request

STW8NB100 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW8NB100 Description

Short technical summary and product information.

The STMicroelectronics STW8NB100 is an N-Channel Power MOSFET utilizing the latest high voltage MESH OVERLAY™ process. It features a drain-source voltage (Vds) of 1000V and a continuous drain current of 7.3A at 25°C.

 

This MOSFET boasts a typical on-resistance (Rds(on)) of 1.3 Ω at 3.6A and 10V gate drive, minimizing conduction losses. It is designed with extremely high dv/dt capability, 100% avalanche tested, and very low intrinsic capacitances for efficient switching.

 

The device is housed in a TO-247-3 package, suitable for through-hole mounting. Its maximum operating junction temperature is 150°C, with a total power dissipation of 190W at 25°C.

 

Applications include Switch Mode Power Supplies (SMPS), DC-AC converters for welding equipment, and uninterruptible power supplies.

STW8NB100 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STW8NB100 N-Channel Power MOSFET
Subcategory: N-Channel

STW8NB100 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW8NB100 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW8NB100 Features

  • 1000V drain-source voltage rating.
  • 7.3A continuous drain current.
  • 1.3 Ω typical static drain-source resistance.
  • TO-247-3 through-hole package.
  • High dv/dt capability.

STW8NB100 Applications

  • Switch Mode Power Supplies (SMPS).
  • DC-AC converters for welding.
  • Uninterruptible Power Supplies.
  • Motor drive applications.

STW8NB100 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STW8NB100?

1000V.

What is the continuous drain current rating?

7.3A at Tc=25°C.

What is the maximum drain-source on-resistance?

1.45Ω at Vgs=10V and Id=3.6A.

What is the gate threshold voltage?

Typical 3V, maximum 5V at Id=250µA.

What is the maximum power dissipation?

190W at case temperature 25°C.

What is the maximum operating junction temperature?

150°C.

What package is the STW8NB100 available in?

TO-247-3 through-hole package.

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