| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,805 pcs
|
8805 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW8NB100 is an N-Channel Power MOSFET utilizing the latest high voltage MESH OVERLAY™ process. It features a drain-source voltage (Vds) of 1000V and a continuous drain current of 7.3A at 25°C.
This MOSFET boasts a typical on-resistance (Rds(on)) of 1.3 Ω at 3.6A and 10V gate drive, minimizing conduction losses. It is designed with extremely high dv/dt capability, 100% avalanche tested, and very low intrinsic capacitances for efficient switching.
The device is housed in a TO-247-3 package, suitable for through-hole mounting. Its maximum operating junction temperature is 150°C, with a total power dissipation of 190W at 25°C.
Applications include Switch Mode Power Supplies (SMPS), DC-AC converters for welding equipment, and uninterruptible power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1000V.
7.3A at Tc=25°C.
1.45Ω at Vgs=10V and Id=3.6A.
Typical 3V, maximum 5V at Id=250µA.
190W at case temperature 25°C.
150°C.
TO-247-3 through-hole package.