| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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220 pcs
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220 pcs | On Request | 1 | On Request | On Request | 2016+ | On Request | On Request |
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The STW8N80 is a high-performance N-channel Silicon Power MOSFET manufactured by STMicroelectronics. This component is designed for power switching applications, featuring a continuous drain current of 8.2 A and a minimum breakdown voltage of 800 V. The drain-to-source resistance is specified at 1.2 Ohms, and the maximum power dissipation is 180 W. It operates within a maximum temperature of 150 °C.
The MOSFET is housed in a TO-247 package, suitable for through-hole mounting. Its robust specifications make it a reliable choice for various power electronics designs where high voltage and current handling are required. The component has 1 element and 3 terminals.
Key electrical characteristics include a continuous drain current of 8.2 A and a minimum breakdown voltage of 800 V. The device's drain-to-source resistance is 1.2 Ohms, and it can dissipate up to 180 W of power. The maximum operating temperature is 150 °C, ensuring performance in demanding environments.
The continuous drain current (ID) for the STW8N80 is 8.2 A.
The minimum breakdown voltage for the STW8N80 is 800 V.
The maximum operating temperature for the STW8N80 is 150 °C.
The STW8N80 comes in a TO-247 package.
The STW8N80 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the STW8N80 is 1 Unlimited.
