| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361 pcs
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361 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW80NF55-08 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 55V and a continuous drain current (Tc) of 80A. The device has a low on-resistance (Rds On) of 8mOhm at 40A and 10V gate-source voltage, and a maximum gate charge (Qg) of 150nC at 10V.
With a high power dissipation capability of 300W (Tc), this MOSFET is suitable for demanding thermal conditions. It operates across a wide temperature range from -55°C to 175°C (TJ). The input capacitance (Ciss) is 3850pF at 25V.
The STW80NF55-08 is mounted via a through-hole method and comes in a TO-247-3 package. It is specified with a gate threshold voltage (Vgs(th)) of 4V at 250µA and a maximum gate-source voltage of ±20V. The technology used is MOSFET (Metal Oxide).
This component is RoHS3 compliant, indicating adherence to environmental standards. Its robust specifications make it suitable for various industrial and power management applications requiring reliable switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55 V.
80 A at case temperature (Tc).
8 mOhm maximum at 40 A drain current and 10 V gate-source voltage.
-55°C to 175°C junction temperature.
TO-247-3 through-hole package.
150 nC.
300 W at case temperature (Tc).