| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,413 pcs
|
6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,800 pcs
|
4800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,600 pcs
|
4600 pcs | On Request | 1 | On Request | On Request | 0632+ | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | 1028 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW7NK90Z is an N-channel enhancement-mode MOSFET manufactured by STMicroelectronics. It features a drain-source voltage (Vdss) of 900V and a continuous drain current of 5.8A at case temperature. The device has a maximum on-resistance of 2 Ohms at 2.9A and 10V gate drive. Gate charge is 60.5 nC and input capacitance is 1350 pF. The gate threshold voltage is 4.5V maximum. Power dissipation is rated at 140W. The operating junction temperature range is -55°C to 150°C. This MOSFET uses a Metal Oxide semiconductor technology and is designed for high-voltage switching applications. It is packaged in a TO-247-3 through-hole package, which allows efficient thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
900V.
TO-247-3.
-55°C to 150°C (junction temperature).
5.8A at case temperature (Tc).
2 Ohms maximum at 2.9A, 10V gate-source voltage.
4.5V maximum at 100µA drain current.
140W at case temperature (Tc).