| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,930 pcs
|
6930 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,620 pcs
|
4620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW75NF20 is an N-Channel enhancement-mode MOSFET manufactured by STMicroelectronics. It features a maximum drain-to-source voltage of 200V and a continuous drain current of 75A at case temperature. The device has a low on-resistance of 34 mOhm maximum at 37A drain current and 10V gate-source voltage. Gate charge is 84 nC at 10V, and input capacitance is 3260 pF at 25V drain-source voltage. The maximum power dissipation is 190W at case temperature. The gate threshold voltage is 4V maximum at 250µA drain current. The device operates over a junction temperature range of -50°C to 150°C. It is housed in a TO-247-3 through-hole package, suitable for high-power applications requiring efficient switching and low conduction losses. Typical applications include power supplies, motor drives, and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200 V.
TO-247-3.
-50°C to 150°C (junction).
34 mOhm maximum at 37A drain current and 10V gate-source voltage.
84 nC at 10V gate-source voltage.
3260 pF at 25V drain-source voltage.
190W at case temperature.