| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,331 pcs
|
2331 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW70N60M2 is a robust N-Channel MOSFET suitable for power switching applications. It boasts a high drain-source voltage rating of 600V and can handle a continuous drain current of up to 68A at a case temperature of Tc.
This MOSFET offers a low on-resistance of 40mOhm maximum at 34A and 10V gate-source voltage, contributing to efficient power transfer. The gate charge is specified at 118nC maximum at 10V, and input capacitance is 5200pF at 100V.
Operating within a temperature range of -55°C to 150°C (TJ), the STW70N60M2 is housed in a TO-247-3 package and utilizes through-hole mounting. Its Metal Oxide Semiconductor (MOSFET) technology ensures reliable performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
68A at case temperature Tc.
40mOhm maximum at 34A drain current and 10V gate-source voltage.
TO-247-3 through-hole package.
-55°C to 150°C junction temperature.
118nC at 10V gate-source voltage.
450W at case temperature Tc.