STW70N60DM2 The STMicroelectronics STW70N60DM2 is an N-Channel MOSFET designed for power applications. It features a 600V drain-source voltage and a continuous drain current of 66A.
Mfr Part #:

STW70N60DM2

Available from 5 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW70N60DM2 is an N-Channel MOSFET designed for power applications. It features a 600V drain-source voltage and a continuous drain current of 66A.
✓ Total Stock: 11,131 pcs
$ Price Range: $2.56

STW70N60DM2 Available from 5 distributors

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STW70N60DM2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW70N60DM2 Description

Short technical summary and product information.

The STMicroelectronics STW70N60DM2 is a single N-Channel MOSFET belonging to the Transistors - FETs, MOSFETs - Single category. It is designed with a 600V drain-to-source voltage (Vdss) and can handle a continuous drain current of 66A at a case temperature of 25°C. The MOSFET exhibits a maximum on-resistance (Rds On) of 42mOhm at 33A and 10V gate-source voltage, with a gate threshold voltage of 5V at 250µA.

 

This device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 446W (Tc). Key electrical characteristics include an input capacitance (Ciss) of 5508pF at 100V and a gate charge (Qg) of 121nC at 10V. The maximum gate-to-source voltage is ±25V.

 

The STW70N60DM2 is packaged in a TO-247-3 through-hole configuration. It is specified as RoHS3 Compliant, with an MSL rating of 1 Unlimited, and REACH Unaffected status.

STW70N60DM2 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STW70N60DM2 N-Channel MOSFET
Subcategory: N-Channel

STW70N60DM2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW70N60DM2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW70N60DM2 Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rated at 66A.
  • Low on-resistance of 42mOhm at 33A, 10Vgs.
  • TO-247-3 package for through-hole mounting.
  • Wide operating temperature range of -55°C to 150°C.

STW70N60DM2 Applications

  • Used in high-voltage power supplies.
  • Suitable for motor control circuits.
  • Ideal for switching inverters.
  • Power factor correction applications.
  • DC-DC converter designs.

STW70N60DM2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the STW70N60DM2?

The maximum drain-source voltage is 600V.

What is the maximum continuous drain current (Id) of the STW70N60DM2?

The maximum continuous drain current is 66A at case temperature 25°C.

What is the on-resistance (Rds on) of the STW70N60DM2?

The maximum on-resistance is 42mOhm at drain current 33A and gate voltage 10V.

What is the operating temperature range of the STW70N60DM2?

The operating junction temperature range is -55°C to 150°C.

What package does the STW70N60DM2 come in?

The package is TO-247-3, a through-hole mounting type.

What is the gate threshold voltage (Vgs(th)) of the STW70N60DM2?

The maximum gate threshold voltage is 5V at drain current 250µA.

What is the input capacitance (Ciss) of the STW70N60DM2?

The maximum input capacitance is 5508pF at drain-source voltage 100V.

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