| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | 2009 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The STW70N10 is an N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for power switching applications, featuring a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 65A at 25°C.
Key electrical characteristics include a low on-resistance (Rds On) of 19.5 mOhm at 30A and 10V, a gate charge (Qg) of 85nC at 10V, and an input capacitance (Ciss) of 5800pF at 25V. The maximum power dissipation is rated at 150W.
This MOSFET is housed in a TO-247-3 package and utilizes a through-hole mounting type. Its standard specifications make it suitable for various power management and switching circuits where reliable performance and efficient operation are required.
The STW70N10 has a drain-to-source voltage (Vdss) of 100V.
The continuous drain current (Id) is 65A at 25°C.
The maximum drain-to-source on-resistance (Rds(on)) is 19.5 mOhm at 30A and 10V.
The STW70N10 is available in a TO-247-3 through-hole package.
The typical gate charge (Qg) is 85 nC at 10V.
The typical input capacitance (Ciss) is 5800 pF at 25V.
The maximum power dissipation is 150W.