BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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95 pcs
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95 pcs | On Request | 1 | On Request | On Request | 0127+ | On Request | On Request |
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The STW6NC90Z is an N-Channel MOSFET from STMicroelectronics, part of the PowerMESH III generation. This device is designed for very high voltage applications, featuring a 900V drain-source voltage and a continuous drain current of 5.2A. Its typical on-resistance is rated at 2.1 Ohms.
Key design features include integrated back-to-back Zener diodes for enhanced ESD capability and ruggedness, extremely high dv/dt capability, very low intrinsic capacitances, and minimized gate charge. These characteristics make it suitable for demanding single-switch applications.
The MOSFET is housed in a TO-247 package, suitable for various industrial and computer applications. Its design prioritizes on-resistance per unit area while maintaining high performance and reliability.
The drain-source voltage (Vds) is 900 V.
The continuous drain current (Id) is 5.2 A.
The typical drain-source on-resistance (Rds(on)) is 2.1 Ω.
The STW6NC90Z is available in the TO-247 package.
The STW6NC90Z uses PowerMESH III technology.