| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,310 pcs
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8310 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,400 pcs
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2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,072 pcs
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1072 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW6N95K5 is a high-voltage N-Channel MOSFET belonging to the Mdmesh series. It is designed for power switching applications, featuring a drain-source breakdown voltage of 950V and a continuous drain current capability of 9A at a case temperature of Tc.
Key electrical characteristics include a maximum drain-source on-resistance (Rds On) of 1.25 Ohms at 3A and 10V gate-source voltage. The MOSFET has a gate charge (Qg) of 13 nC at 10V and a gate-source voltage (Vgs) limit of ±30V. Its input capacitance (Ciss) is rated at 450 pF at 100V Vds.
This device operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 90W (Tc). It is housed in a TO-247-3 package, suitable for through-hole mounting.
The STW6N95K5 utilizes MOSFET technology and is constructed from Silicon (Si). It is specified with a RoHS3 Compliant status and an MSL 1 Unlimited rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 950V.
The continuous drain current is 9A.
The Rds On resistance is 1.25 Ohms at 3A, 10V.
The gate charge is 13 nC.
The operating temperature range is -55°C to 150°C.
This MOSFET is in a TO-247-3 package.
This MOSFET is mounted through hole.