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STW68N60M6 The STW68N60M6 is an N-Channel MOSFET from STMicroelectronics with a 600V drain-source voltage rating and 63A continuous current capability. It is housed in a TO-247-3 package.
Mfr Part #:

STW68N60M6

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STW68N60M6 is an N-Channel MOSFET from STMicroelectronics with a 600V drain-source voltage rating and 63A continuous current capability. It is housed in a TO-247-3 package.
✓ Total Stock: 1,023 pcs
$ Price Range: $2.56

STW68N60M6 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
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1,023 pcs
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1023 pcs On Request 1 On Request On Request On Request On Request On Request
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STW68N60M6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STW68N60M6 Description

Short technical summary and product information.

This STMicroelectronics STW68N60M6 is an N-Channel MOSFET designed for power applications. It offers a high drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 63A at a case temperature (Tc) of 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 41mOhm at 31.5A and 10V gate-source voltage, ensuring efficient power transfer.

 

Key electrical characteristics include a gate charge (Qg) of 106nC and an input capacitance (Ciss) of 4360pF. The gate threshold voltage (Vgs(th)) is 4.75V at 250µA, with a maximum gate-source voltage of ±25V. The device operates within a temperature range of -55°C to 150°C (TJ).

 

Packaged in a TO-247-3 configuration, this MOSFET is designed for through-hole mounting. Its high power dissipation capability of 390W (Tc) makes it suitable for demanding applications. The RoHS status is compliant, and it has a Moisture Sensitivity Level (MSL) of 1.

STW68N60M6 Quick Information

Product Type: MOSFET
Canonical Name: STW68N60M6 N-Channel MOSFET
Subcategory: N-Channel

STW68N60M6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW68N60M6 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW68N60M6 Features

  • 600V drain-source voltage rating.
  • 63A continuous drain current.
  • Low 41mOhm on-resistance.
  • TO-247-3 package for through-hole mounting.
  • RoHS3 compliant.

STW68N60M6 Applications

  • Suitable for high-power switching.
  • Ideal for power supply circuits.
  • Used in motor control applications.
  • Effective in industrial automation.

STW68N60M6 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STW68N60M6?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current of the STW68N60M6?

The continuous drain current is 63A.

What is the on-resistance of the STW68N60M6?

The maximum on-resistance (Rds On) is 41mOhm at 31.5A drain current and 10V gate-source voltage.

What package type is the STW68N60M6 MOSFET in?

The STW68N60M6 is supplied in a TO-247-3 package.

How is the STW68N60M6 mounted?

This MOSFET is designed for through-hole mounting.

What is the operating temperature range for the STW68N60M6?

The operating temperature range is -55°C to 150°C (TJ).

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