| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,710 pcs
|
1710 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW65N80K5 is a single N-Channel MOSFET designed for power applications. It boasts a high drain-source voltage rating of 800V and can handle a continuous drain current of up to 46A at case temperature.
Key electrical characteristics include a maximum on-resistance of 80mOhm at 23A and 10V gate drive voltage. The device features a gate threshold voltage of 5V at 100µA and a maximum gate-to-source voltage of ±30V. Input capacitance (Ciss) is rated at 3230 pF at 100V, and gate charge (Qg) is 92 nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 446W at case temperature. It is constructed using MOSFET (Metal Oxide) technology.
The STW65N80K5 comes in a TO-247-3 package and is designed for through-hole mounting. It is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-247-3 through-hole package.
-55°C to 150°C (junction temperature).
80mOhm maximum at 23A drain current and 10V gate-source voltage.
5V maximum at 100µA drain current.
46A at case temperature.
446W at case temperature.