| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,531 pcs
|
1531 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW65N65DM2AG is a single N-Channel MOSFET with a maximum drain-source voltage of 650V and a continuous drain current rating of 60A at a case temperature of Tc. It features a low on-resistance of 50mOhm at 30A and 10V gate-source voltage, with a gate charge of 120nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 446W at Tc. It is constructed using MOSFET (Metal Oxide) technology and is housed in a TO-247-3 package, suitable for through-hole mounting.
The device has a gate threshold voltage of 5V at 250µA and a maximum gate-source voltage of ±25V. The drive voltage is 10V. It is specified with RoHS3 compliance and an MSL of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650V.
The continuous drain current is 60A at the case temperature (Tc).
The maximum on-resistance (Rds On) is 50mOhm when measured at 30A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a TO-247-3 package.
It is designed for through-hole mounting.