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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STW65N60DM6 is a high-voltage N-channel Power MOSFET from STMicroelectronics, belonging to the MDmesh DM6 fast-recovery diode series. This component is designed for demanding switching applications, offering a 600V drain-source breakdown voltage and a continuous drain current of 38A at 25°C.
Key electrical characteristics include a maximum static drain-source on-resistance of 71 mΩ at a gate-source voltage of 10V and a drain current of 19A. It also features a low gate charge and input capacitance, contributing to efficient switching behavior. The MOSFET is 100% avalanche tested and exhibits extremely high dv/dt ruggedness.
Packaged in a TO-247 or TO-247 long leads package, this device is suitable for through-hole mounting. The operating junction temperature range is -55°C to 150°C, with a total power dissipation of 250W at 25°C.
Applications for the STW65N60DM6 include high-efficiency bridge topologies and ZVS phase-shift converters, benefiting from its low recovery charge and time, and improved RDS(on) per area compared to previous generations.