| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
670 pcs
|
670 pcs | On Request | 1 | On Request | On Request | 1308+ | On Request | On Request | |
|
135 pcs
|
135 pcs | On Request | 1 | On Request | On Request | 1308+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW62N65M5 is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It is designed for high-power applications, featuring a maximum drain-source voltage (Vdss) of 650V and a continuous current capability of 46A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 49mOhm at 23A and 10V gate-source voltage. The device has a maximum gate-source voltage of ±25V and a gate threshold voltage (Vgs(th)) of 5V at 250µA. Input capacitance (Ciss) is rated at 6420 pF at 100V, and gate charge (Qg) is 142 nC at 10V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 330W (Tc). It is housed in a TO-247-3 package and features a through-hole mounting type, making it suitable for various power switching and control circuits.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 650 V.
The continuous current rating is 46A at the case temperature.
The maximum on-resistance (Rds On) is 49mOhm when measured at 23A drain current and 10V gate-source voltage.
The operating junction temperature (TJ) can reach up to 150°C.
The STW62N65M5 is supplied in a TO-247-3 package.
This MOSFET is designed for through-hole mounting.