| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STW60NE10 is a high-performance N-Channel Power MOSFET from the STripFET family. It is designed for applications requiring high current and fast switching speeds, such as motor control, DC-DC converters, and automotive systems.
Key electrical characteristics include a drain-source breakdown voltage of 100V, a maximum continuous drain current of 60A at 25°C, and a low typical on-resistance of 0.016 Ω at 30A and 10V. The device offers a maximum power dissipation of 180W at 25°C and an operating junction temperature up to 175°C.
This MOSFET is housed in a TO-247-3 package, suitable for through-hole mounting. Its design emphasizes exceptional dv/dt capability and 100% avalanche tested, ensuring ruggedness and reliability in demanding applications. The STW60NE10 is well-suited for applications including high current, high-speed switching, solenoid and relay drivers, motor control, audio amplifiers, and automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V (minimum).
60 A.
TO-247-3 (through-hole).
175°C.
0.016 Ω typical, maximum 0.022 Ω.
2V to 4V at ID=250µA.
500 mJ at starting Tj=25°C, VDD=35V.