| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,380 pcs
|
6380 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW60N65M5 is a high-performance N-Channel MOSFET. It is rated for a maximum drain-source voltage (Vdss) of 650V and can handle a continuous current of 46A at the case temperature.
This MOSFET offers a low on-resistance (Rds On) of 59mOhm at 23A and 10V gate drive voltage, contributing to efficient power handling. Key electrical parameters include a gate charge (Qg) of 139nC and an input capacitance (Ciss) of 6810pF.
The device operates at temperatures up to 150°C (TJ) and is housed in a TO-247-3 package suitable for through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
This component is suitable for various power switching applications where high voltage and current capabilities are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
46A at case temperature Tc.
59mΩ at 23A and 10V gate drive.
Maximum 150°C.
TO-247-3 through-hole package.
139nC at 10V gate voltage.
6810pF at 100V drain-source voltage.